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APTGT100DH170G
Asymmetrical - Bridge Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 CR3
VCES = 1700V IC = 100A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT100DH170G - Rev 1
July, 2006
Max ratings 1700 150 100 200 20 560
Unit V A V W
APTGT100DH170G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 350 2.4 6.5 500 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 VGE = 15V Tj = 125C VBus = 900V IC = 100A Tj = 125C R G = 4.7
Min
Typ 9 0.36 0.3 370 40 650 180 400 50 800 300 32
Max
Unit nF
ns
ns
mJ 31
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 100A
100 1.8 1.9 385 490 28 46 12 24
2.2
V ns C mJ
APTGT100DH170G - Rev 1 July, 2006 2-5
IF = 100A VR = 900V
di/dt =1600A/s
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APTGT100DH170G
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.22 0.39 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500 -40 -40 -40 3 2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT100DH170G - Rev 1
July, 2006
APTGT100DH170G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 200 T J = 125C 160 IC (A) 120
VGE =13V VGE=20V
200 175 150
IC (A)
T J=25C
125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 V CE (V) 3 3.5 4
TJ=125C
80 40 0 0 1 2
VGE =15V VGE=9V
3 VCE (V)
4
5
Transfert Characteristics 200 175 150 E (mJ) 125 IC (A) 100 75 50 25 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 100 87.5 75 E (mJ) 62.5 50 37.5 25 12.5 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 40
Er
Eoff
Energy losses vs Collector Current 100
V CE = 900V V GE = 15V RG = 4.7 T J = 125C Eon
TJ =25C
80
TJ=125C
60 40 20 0
Eoff Er
T J=125C
10
11
12
13
0
25
50
75 100 125 150 175 200 IC (A)
Reverse Bias Safe Operating Area 250
VCE = 900V VGE =15V IC = 100A T J = 125C
Eon
200 IC (A) 150 100 50 0 0 400 800 1200 1600 2000 V CE (V)
VGE =15V TJ =125C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
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APTGT100DH170G - Rev 1
July, 2006
APTGT100DH170G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 25 20
ZVS V CE =900V D=50% RG=4.7 T J=125C T C=75C
Forward Characteristic of diode 200 175 150 125 IF (A) 100 75 50
T J=125C TJ=125C T J=25C
15 10 5 0 0 20 40 60 80 IC (A)
ZCS
hard switching
25 0 100 120 140 0 0.5 1 1.5 V F (V) 2 2.5 3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.5 0.3 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT100DH170G - Rev 1
July, 2006

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